Characterization of al/nigrosine/n-si photodiodes fabricated by spin coating method

This study presents the results of investigations on the structural, optical, electrical and photodiode properties of Al/Nigrosin/n-Si Schottky diodes obtained by spin coating method. The aim of the study is to investigate the changes in optoelectronic properties of Nigrosin, an organic material, by using it in Schottky diode structures. Firstly, the effect of Nigrosin on the n-Si surface was analyzed through I-V (current-voltage) characteristics. The results obtained show that Nigrosin induces significant changes in the electrical properties of Schottky diode structures. In particular, changes in parameters such as ideality factor and barrier height of Schottky diodes revealed that Nigrosin improves the optoelectronic performance and enhances the performance of the diode. In this study, the diode parameters were calculated using Cheung and Norde methods. Both methods provided consistent results in evaluating the electrical properties of the diode. Furthermore, the structural properties of Nigrosin were investigated using XRD analysis and the interaction of this material in the Schottky diode structure was confirmed. Photovoltaic parameters have also been extensively studied and the effect of Nigrosin doping on parameters such as photoresponsivity, efficiency and photosensitivity has been evaluated. The results show that the positive effects of Nigrosin on Schottky diodes can further advance the potential use of organic materials in optoelectronic systems. In particular, this study provides a new perspective towards a deeper understanding of the effects of organic materials such as Nigrosin on Schottky diodes and photovoltaic devices and lays a solid foundation for future applications of such organic-electronic structures.