Terahertz uygulamaları için optimize edilmiş bir yüzeysel schottky diyot: Elektromanyetik modelleme tabanlı bir yaklaşım

Terahertz (THz) spectrum, also called submillimeter spectrum, is a portion of electromagnetic (EM) band within the ITU-designated band of frequencies from 0.3 THz to 3 THz sandwiched between microwave and infrared/optical in EM spectrum. However compared to its microwave and infrared/optical neighbors, 'THz gap' is not heavily explored and it became a hot topic for researchers in recent years. As a result, progress in THz electromagnetics is currently undergoing a renaissance, with burgeoning wide range of applications such as biomedical imaging, sensing and communication applications. Schottky diode, the fastest conventional detection technology, is a promising component for future THz communication receiver systems. However, the overall performance of planar Schottky diode is limited by parasitic elements at THz frequencies. Recently, a lot of efforts are devoted to decreasing the impact of parasitic components. In this work, we introduce a systematic approach for analyzing the Schottky diode structure based on electromagnetic modeling using high frequency structural simulator (HFSS). S-parameters obtained from this 3-dimensional EM simulation were imported to Microwave Office environment to extract all parasitic elements (resistances and capacitances) from lumped-equivalent circuit model. Using this methodology, the effect of geometrical design parameters on the performance of the diode is investigated by which an optimized diode can be obtained. Using this methodology, we propose two concepts to minimize the amount of shunt capacitance and series resistance. The proposed design shows a cut-off frequency that is about 4 times greater than that of reference conventional diode. This methodology is not just limited to the diode but also it can be extended to all integrated planar devices where high frequency cross talk noise is detrimental.