Al/orange G/p-tipi Si MISdevre elemanlarının elektriksel ve kontak özellikleri üzerine gama ışınlarının etkisi

In this study, electrical and interfacial properties of Al/OG/p-Si diode produced by using Orange G (OG) organic thin film before and after Co-60 gamma irradiation were determined by Cheung and Norde techniques and by KEITHLEY 4200-SCS, at room temperature, in the dark environment. current-voltage (IV) measurement, capacitance-voltage (CV) measurements were made. The values obtained as a result of the measurements made are shown in the table and graphed. In line with the obtained values, some parameters such as barrier height (ɸB), ideality factor (n) and series resistance (Rs) were obtained from Norde function and Cheung functions.