Theoretical investigation of the effect of nitrogen on optical and electronic properties of GaInAsN semiconductors

The investigation of profound of nitrogen containing III-V semiconductors in fundamental properties proven experimentally and device applications and to propose new device materials are the aim of this thesis. We have presented an overview of the fundamental properties of nitrogen incorporated GaInAs semiconductor and the physics behind of unusual characteristics of GaInAsN. We have compared the band alignments of the nitrogen-free and nitrogen-included laser devices on GaAs and InP substrates. We have presented the calculations to investigate the role of N and Sb on the critical thickness hc of strained GaInAsNSb QWs on GaAs and InP substrate for (001) and (111) orientations.We have presented a new analytical method to investigate the effect of nitrogen on intrinsic carrier density, screening parameter, effective Bohr radius and binding energy of shallow donors in GaAsN alloys. We have investigated the relation between the binding energy of hydrogenic shallow donor in bulk GaAsN alloys for different screening parameter and nitrogen concentrations. We have investigated the refractive indices and the corresponding optical confinement factors of the proposed GaInAsN laser material systems on GaAs substrate. We have compared conventional and N-based quantum well laser systems to find which has better optical confinement.