Production of titanium oxide semiconductor film and investigation of optical and crystal structure

In this study, TiO2 semiconductor films were obtained using spin coating method. Considering that TiO2 goes phase transition under high temperature, films were processed and annealed under 400 ºC and air condition. The thickness of TiO2 films were obtained based on weight method and the values calculated were between 58-670 nm. The films showed the characteristics of one of the x-ray diffraction patterns which were based on the PDF card number 03-065-5714 and the results were anatase TiO2. In addition, it was found that the crystal structure of TiO2 films [101] direction had preferential orientation. The grain sizes of the films were calculated approximately among the ranges of 30-37 nm. When examined the optic absorption measures between the 190-3300 nm wavelength, it was found that the band gap measures of TiO2 film values were between 3,50-3,70 eV and allowed direct band transition. After that through using field emission scanning electron microscope (FESEM), the surface appearances of the films were examined.