Yüksek verimli PIN foto diyot üretilmesi ve tıbbi uygulamalar için değerlendirilmesi

Today, radiation safety has become an extremely important issue. Therefore, tracking the doses of radiation that people who work in radiated environments are instantly exposed to is extremely important. While passive dose measuring devices used for this purpose are successful in measuring the dose exposure rate, reading the dose information that these devices measure is a considerable waste of time. For this reason, it is extremely important to get the dose information in the medium instantly. Semiconductor-based sensors have been studied extensively in the literature, and the results have shown that silicone-based photodiodes are very successful in instantaneous dose mortality, and Si-PIN PDs are well-designed to measure instant dose speeds. However, the architectural design of a Si-PIN PD, which is planned to be used in radiation sensing, and the knowledge of the variables necessary for the production of this structure are critical. In the literature, the radiation responses of produced Si-PIN PDs are studied, but the data shared on production is quite insufficient. In this study, the Si-PIN PD architecture was designed using Silvaco software tools. The electrical properties of the designed Si-PIN PDs have been studied using ATLAS software to obtain the most suitable original Si- PIN PD architecture for use in dosimeters. The variables of the production stages have been determined using the Silvaco ATHENA tool so that the resulting architecture can be produced in a laboratory environment. After the completion of the design, electrical tests of Si-PIN PDs were carried out, X-rays test of Si-PIN PD's were performed in ion chamber conditions. Subsequently, radiation spectroscopy from 204Tl, 90Sr sources was analyzed. The results show that Si-PIN PDs are promising for future use in healthcare applications.