Production and characterization of ZnO nanorod based schottky and metal-semiconductor-metal photodedectors

This thesis study covers the production and analysis of metal oxide semiconductors, especially photodetector and nano structured photodetectors, which have wide application areas such as LED applications, solar cells, panel screens. In the research, ZnO seed layer was coated on p-Si substrate by using RF sputtering method. ZnO nanorods of different molarity (10 and 20 mM) and different durations (2, 3 and 4 hours) were produced at 90oC by using hydrothermal method on the seeding layer. With the DC breaking method, aluminum Schottky and ohmic contacts were obtained. SEM measurements of ZnO nanorods were measured and the morphological properties of ZnO nanorods were examined by changing the production parameters. Time-dependent current (I(t)) measurements were measured for Schottky photodetectors and metal-semiconductor-metal photodetectors under 50 and 100 mW / cm2 sunlight and supply voltage (1, 5, 10 and 15 V). It was observed that when 50 and 100 mW / cm2 light intensity was dropped on the sample, the current suddenly increased and saturated, and when the light was turned off, the current reached its initial value. Rise time, decay time, photo response and photo sensitivity parameters affecting the performance of photodetectors were calculated. Rise time and fall time are compared for the two studied photodetector types. The performances of 6 samples produced at different molarities (10 and 20 mM) and at different times (2, 3 and 4 hours) were tried to be revealed for Schottky and metal-semiconductor-metal photodetectors according to the calculated parameters.