Production of compound ZnS semiconductor films by spray pyrolysis method

11 ABSTRACT Master of Science Thesis PRODUCTION OF COMPOUND ZnS SEMICONDUCTOR FILMS BY SPRAY PYROLYSIS METHOD EVREN ARABACI Anadolu University Graduate School of Natural and Applied Sciences Physics Program Supervisor: Prof.Dr. Muhsin ZOR 2001, 80 pages In this work, ZnS semiconducting material belonging to the II- VI group have been produced by means of spray pyrolysis method at 275°C, 300°C, 335°C and 425°C substrate temperatures. From the x-ray diffraction of pattern it is seen that films produced at 425°C are polycrystalline in structure whereas the ones produced at lower temperatures are amorphous. The materials observed to have a direct band gap, which are varied between 3,29eV-3,99eV due to the substrate temperatures. All the films exhibited n- type conduction characteristics. The SEM micrographs of the films have shown that layered-type stackings are dominant with well-defined boundaries. The adherence of the films produced at substrate temperatures below 425°C observed to be rather weak. Keywords: II-VI Compound Semiconductors, Spray-Pyrolysis Method, Optical Absorption, X-Ray Diffraction, Scanning Electron Microscopy (SEM).