Production and characterization of Al, Ga doped N-type ZnO transparent conducting oxides

In this work, undoped ZnO, Al doped ZnO, Ga doped ZnO and Al-Ga co-doped ZnO thin films were produced in two steps on glass substrate by sol-gel spin coating and hydrothermal method. Structural, optical and electrical properties were explained. A homogeneous solution was obtained by dissolving zinc acetate in diethanolamine and some ethanol in two different concentrations, 0.5 M and 1.0 M, respectively. Seed layers formed by spin coating, were annealed at 400 oC/5 h. It is aimed to find anode materials with low cost, suitable for serial production and high commercialization with different molarities and doping. Morphological structures and thicknesses of the thin films were analyzed by scanning electron microscopy (SEM), orientation of the particles in thin films were analyzed by X-ray diffraction (XRD) and electrical conductivity was measured by 4-point current voltage characteristic. Optical transmittance of thin films were measured by UV-VIS-NIR Spectrophotometer in the range between 200 and 800 nm.