Production and characterization of AlN layers via physcal vapor deposition method

In this study it is aimed to fabricate Aluminum nitride (AlN) layers which have been widely used and have excellent physical and chemical properties, such as high thermal conductivity (100–260 W/m K)., wide band gap (6.2 eV) structure, high chemical stability, low thermal expansion and high surface aqustic velocity transmittance were facricated by RF magnetron sputtering technique that a type of physical vapor deposition. Furthermore, the thicknesses of films were measured, mineralogical datas were obtained by XRD method, and surface properties were examined by AFM. In the study AlN thin film layers were deposited on the glass substrates was using Aluminum targets by RF magnetron sputtering technique. AlN coating process performed for constant base pressure (2.10-2 mbar) constant working pressure (5.10-2 mbar), constant gas mixture rate (%50 Ar, %50 N2), and variable working power and deposition time. In the result, it was observed that the AlN deposition rate increased with increasing RF power. In addition the thicknesses and roughness of the films increased with the increasing RF power and deposition