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Some physical properties of alüminum doped ZnO thin films

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2006
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Abstract (EN)

In this work, Al doped ZnO thin films doped with different aluminumconcentration (1%, 3%, and 5%) were deposited onto glass substrates by spray pyrolysismethod. The structural, optical and electrical properties of non-doped and Al-doped ZnOfilmshave been investigated. X-ray diffractometer measurements revealed that all the obtainedfilms were polycrystalline with the hexagonal structure. Texture coefficient (TC), grain sizevalues and lattice constants were calculated. The optical band gap of all the films have beeninvestigated by the measurement of the optical absorbance as a function of wavelength andfound to be between 3.2-3.3eV. The average optical transmittance for the films was over 80%in the visible range. The optical constants such as reflective index, extinction coefficient, realand imaginary compenets of dielectricconstants werw also calculated by using absorptionspectrum data.The electrical properties of the films were investigated by using Van der Pauw method.The resistivity values of the films were found between 0.26 Ωcm-1.13 Ωcm.Keywords: ZnO, Spray Pyrolysis, Structural Properties, Optical Properties, Optic Constants,Van der Pauw Method

Author

Olcay Eren

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Olcay Eren (Master Thesis). Some physical properties of alüminum doped ZnO thin films, 2006, Anadolu University.

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