Optical and structural analysis of AlxGa1-xAs and InxGa1-xN layered semiconductor structures
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Abstract (EN)
In this study, optical and structural properties of AlxGa1-xAs/GaAs single quantum well (SQW), AlxGa1-xAs/GaAs and InxGa1-xN/GaN multi quantum wells (MQWs) are analyzed by growing, which are used in the production of electronic and optoelectronic devices. AlxGa1-xAs/GaAs (100) LED are grown by Molecular Beam Epitaxy (V80H-MBE), and InxGa1-xN/GaN LED are grown by using Metal Organic Vapour Chemical Deposition (MOVCD). Crystal Structure analyse and optical properties of grown AlxGa1-xAs/GaAs and InxGa1-xN/GaN semiconductors and determined by high resolution X-Ray diffraction (HRXRD), Atomic Force Microscopy (AFM), Spectroscopic Elipsometry (SE), and photoluminescence (PL) systems. Key Words :MBE, MOVCD, QW, MQW, AlxGa1-xAs/GaAs, InxGa1-xN/GaN
Author
Sabit Korcak
How to Cite
Sabit Korcak (Doctorate thesis). Optical and structural analysis of AlxGa1-xAs and InxGa1-xN layered semiconductor structures, 2007, Gazi University.
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