Electrical characterization of Au/Poly (Linoleic Acıd)-g-Poly (Methyl Methacrylate) (Plimma) /n-Si Schottky diodes

In this study, electrical characterization of the Au/PLiMMA/n-Si diodes with poly (linoleic acid) -g-poly (methyl methacrylate) (PLiMMA) graft copolymer interfacial layer was performed. The PLiMMA polymer layer was coated on the n-Si single crystals by electrospinning method. The nanofiber nature of this polymeric interfacial layer was confirmed by a scanning electron microscope (SEM). The electrical parametres of the Au/PLiMMA/n-Si Schottky diode under dark and a halogen light source was obtained by using current-voltage (I-V) measurements at room temperature. Main electrical parameters such as reverse bias saturation current (Io), barrier height (fb), ideality factor (n), series and shunt resistance (Rs and Rsh) and interface state density (Nss) are obtained for this diode.