Effects of ultraviolet light on B-doped CdS thin films and photovoltaic parameters of CdS/Cu2S solar cells

CdS thin films of different concentrations doping with boron (B) were deposited by spray pyrolysis method on glass and SnO2 substrates. The effects of ultraviolet light on the crystal structures, electrical and optical properties of B-doped CdS thin films were investigated as a function of (B/Cd). X-ray diffraction studies showed that all samples were in a hexagonal structure. It was determined that the preferred orientation of illuminated and non-illuminated samples changed from (101) plane to (002) plane with B doping. The increase of the peak intensity in the (002) plane with boron doping is due to B2O3 phase in the crystal structure. The lattice parameters of B-doped samples remained constant after illumination. Further, it was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples before and after the illumination with UV light and the obtained results were interpreted. The effects of UV light on B-doped CdS/Cu2S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cells were more durable against the UV light.