Investigation of growth of CdO semiconductor with the improved computer controlled successive ionic layer absorption and reaction method

After the Industrial Revolution, mass production technology has developed rapidly and reached to the space age technology. Today, material production techniques have been proceeding same speed. Especially developments in semiconductor technology facilitated production of transistors which are important elements of circuits. SILAR is a growth method different than chemical and physical evaporation and its methodology develops day by day. In this study; it is aimed that developing a system which has ability of producing more products in different forms in same cycle by observing the missing aspects of classical machines. In line with this goal, design and production of a device, which is supported by computer control and stepper motors, was performed. The device has the flexibilitiy to perform the desired program and time, as well as a device that can reduce the error margin to a minimum. CdO semiconductor thin films were obtained by developed device, by using different pH value and different number of turns at room temperature then thin films were annealed at 200 ºC. Thus, the effects of thickness and different pH values on surface properties of thin films were investigated. Spectrophotometer and XRD measurements were used during the experiments and the results were supported by SEM images. According to the results; Thin film layers with highly homogeneous microstructures can be obtained by using the developed device and it has been determined that the thickness and pH values have effects on the quality of microstructures. The ability to perform different experiments at the same time and to enable the standardization of SILAR operations is considered as significant enhancements of device. In addition to these benefits, it is thought that the device can be used successfully in the SILAR process when considering the advantages of time savings.