Investigation of electro-optic and dielectric properties of CdSeS/ZnS quantum dot-doped 5CB nematic liquid crystals

In this study, the electro-optic and dielectric properties of CdSeS/ZnS quantum dot doped 5CB (4-pentyl-4'-cyanobiphenyl) nematic liquid crystal structure were investigated. The CdSeS/ZnS quantum dot was doped into the 5CB nematic liquid crystal at a ratio of 0.05 %, 0.10 % and 0.15 % wt and liquid crystal-quantum dot composite structures were formed. Electric and dielectric properties of 5CB nematic liquid crystal and CdSeS/ZnS quantum dot doped 5CB nematic liquid crystal composite structures were investigated in the frequency range of 1 kHz-10 MHz and 0 V-20 V voltages with using dielectric spectroscopy method. The optical properties of the samples were investigated by optical transmission spectroscopy at a wavelength range of 300 nm-800 nm. The optical band gap, real and imaginary part of complex dielectric constant, dielectric anisotropy, the relaxation frequency, crossover frequency, threshold voltage, splay elastic constant and relaxation time parameters of 5CB nematic liquid crystal and CdSeS/ZnS quantum dot doped 5CB nematic liquid crystal composite structures were obtained using experimental data. The values of the optical band gap, threshold voltage and splay elastic constant parameters were found to decrease significantly with CdSeS/ZnS quantum dot doping. The voltage dependent current values of the investigated structures were also obtained. Depending on the increase in charge density caused by the quantum dots, the value of the current passing through the medium is increased. Results show that CdSeS/ZnS quantum dots cause significant changes in the electro-optic and dielectric properties of 5CB nematic liquid crystal composite structures and increase the conductivity of the mediums.