Production and characterization of Cu-doped PbO thin films by SILAR technique and electronic properties of Al/(2-4-6-8%)Cu:PbO/p-Si Schottky diode

In this thesis study, undoped and Cu-doped lead oxide films at different rates were coated with the In this thesis study, undoped PbO and Cu doped lead oxide (PbO) films with different ratios (2, 4, 6 and 8%) were coated on glass and Si substrate using the SILAR (Sequential Ionic Layer Adsorption and Reaction) technique. After depositing PbO thin film on the front surface of the silicon crystal, aluminum (Al) metal was evaporated using the physical evaporation method (PVD) to form Al/undoped PbO-2,4,6,8%Cu:PbO/p-Si MIS Schottky contacts. The structural, surface, optical and electrical properties of the coated undoped and doped PbO thin films were determined using XRD, SEM-EDX, UV-Vis spectrometry. It was observed that PbO thin films had a polycrystalline structure and a continuous PbO film was formed with vertical and horizontal flakes on the surfaces. The band gap of the thin films was determined in the range of 3.0-3.2 eV. I-V measurements were taken to determine the electrical properties of the manufactured Al/p-Si MIS Schottky diodes with different Cu doping ratios and PbO interfaces. Electrical parameters were determined as saturation current (Is), ideality factor (n), rectification ratio (RR), barrier height (Φb), series/shunt resistances (Rs, Rsh) and density of interface states (Nss). When the experimental results were compared, it was seen that the diode with 2% Cu doping PbO interface significantly improved the quality of MS type SDs compared to other diodes in terms of lower Io, n, Nss and higher RR, BH and Rsh values.