Growth and electrical characterization of undoped and sb-doped ge single crystals by czochralski technique

In this work, an undoped and two Sb-doped Ge bulk single crystal ingots were grown by Czochralski technique. The electron transport properties of the samples taken from part of the end cone of the ingots grown have been investigated. The temperature dependence of Hall effect and resistivity measurements were carried out in a temperature range of 20-350 K at a constant magnetic field of 0,4 Tesla. Using the conventional analysis methods, the analysis of carrier density and mobility of undoped and doped Ge samples have been examined. As a result of analysis, it has been determined that phonon scattering mechanisms (acoustic and polar) are dominated in high temperature region and that ionized impurity scattering mechanisms are dominated in low temperature region for each three samples. It has been determined that effect of ionized impurity scattering mechanisms increase with the increasing doping. In addition, the values of the energy band gap, impurity components (NA and ND) have been determined and their effects have been discussed on electron transport properties.