Investigation of the electrical and optical properties of ni/n-GaAs schottky diodes obtained by electrodeposition

Metal and semiconductor combinations are important optoelectronic and electronic devices applications for science world during recent years. In especially Schottky Barrier contacts manufactured by combination of earth elements (Fe, Ni, Co) with semiconductors are for the device optical detectors, solar cells and chemical sensors. Gallium arsenide (GaAs) is one of the most popular semiconductor materials. Electrodeposition method is also the reason why it is preferred in coating method due to its high efficiency and low cost. In this research, electrical and optical properties of metal-semiconductor Schottky diode were investigated. Schottky diode was fabricated by electrodeposition of Nickel onto n- GaAs substrate. Ideality factor and barrier height were calculated from current-voltage measurements at room temperature. Light volt-current characteristics were investigated. The current–voltage characteristics of the samples were examined by illuminating with different wavelength laser beams. Spectral photoresponse measurements of the structure were carried out at room temperature. This were shown that the fabricated structure exhibited behavior that makes it a good candidate for optoelectronic device applications.