Fabrication of quaternary functional semiconductor infrared photodetectors and investigation of their electronic properties

In this thesis study, Cu2CoSnS4, Cu2NiSnS4 and Ti1-xO2CdxO (x = 0.0,0.01,0.05,0.10) materials have been respectively synthesized by hydrothermal and sol gel methods. Cd doped TiO2 films have been grown on the glass substrates with a spin coating method. The structural properties of the samples have been analyzed using XRD, SEM and UV-Vis techniques. The electrical characteristics of Al/p-Si/Cu2CoSnS4/Al, Al/p-Si/Cu2NiSnS4/Al and Al/n-Si/Ti1-xO2CdxO/Al diodes have been analyzed by current-voltage, capacity-voltage and current-time electrical characterization techniques. The photocurrent of the diodes under solar and IR lights is higher than the dark current. The photosensitivity and photoresponse properties of the diodes have been analyzed. The photoresponse of TiO2 based diodes has been changed with the addition of Cd. The photosensitivity values of TiO2 and 10%Cd doped diode under sunlight have been found to be 0,103.10-3 A/W and 0,139.10-2 A/W, respectively. The obtained results indicate that the prepared photodetectors can be used in optoelectronic applications.