Investigation of structural and electrical properties of ZnO thin films by mist chemical vapor deposition method on sapphire with different orientation

In this study, ZnO thin films on sapphire substrates with c-, r-, m- orientation were grown by Mist-CVD method. ZnO samples were grown under enriched ozone gas atmosphere at 350℃ temperature for 30 minutes. X-Ray Diffraction (XRD), Atomic Force Microscope (AFM) and Scanning Electron Microscopy (SEM), Raman spectroscopy and Hall effect measurements were carried out. According to XRD results grown ZnO films have hexagonal phase. Both AFM and SEM images are shown a continues and homogenous films on the surface. The vibration modes related to hexagonal ZnO are observed by Raman spectroscopy. The XRD peaks of ZnO has become stronger after the annealing of properties of the grown samples. The obtained results indicate that ZnO thin films with quality on sapphire substrates with different orientation are grown by mist chemical vapor deposition.