Characterization of semiconductor ZnS thin films produced by electro-chemical deposition method for photovoltaic applications

Zinc sulfide, is an important inorganic semiconductor with a wide bang gap ranging from 3.5-3.7 eV which is suitable for applications in solar cells. ZnS thin films are nontoxic to human body, very cheap and abundant. The semiconductor thin film deposition from aqueous solution becomes increasingly popular because it has advantages of economical and capability of large area deposition. Zinc sulfide thin films have been deposited onto indium tin oxide glass substrate by electrodeposition method at room temperature using a simple three-electrode system and aqueous solutions of zinc chloride and sodium thiosulfate solutions. Mott-Schottky (1/C2 vs Ag/AgClsat.) analysis of ZnS/ionic solution with NaCl were carried out at an AC amplitude of 10 mV at a constant frequency at 100 Hz. The flat band potential and carrier concentration are estimated by C-V measurements.