Growing doped (Cu-Sn) and undoped zno semiconductor thin films by SILAR method; structural and electrical characterization

In this thesis study, structural and electrical characterization of undoped and Sn-Cu doped ZnO thin films grown on ITO substrate by using the SILAR method were performed. The grown thin films were obtained by performing 40 times SILAR cycle and annealed at 300 °C. Doped ZnO thin films were obtained by keeping the copper (Cu) doping ratio constant and changing the tin (Sn) doping ratio from 1 % to 3 %. The structural, surface morphological and electrical properties of the produced undoped and Sn-Cu doped thin films were investigated. From SEM analyzes, it was observed that the films produced without additives and with different concentrations of Sn-Cu grew spherically (from 64 nm to 177 nm) depending on the concentration on the ITO substrate, and their morphological properties changed depending on the doping concentration. From electrical analyzes, doping processes at different rates (I-V) give positive results and it is thought that produced thin films can be used as a transparent carrier film (TCO) because they do not have high resistance.