Mobility calculations in In0.51Ga0.49As and In0.60Ga0.40As semiconductors
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2001
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Advisor: Doç. Dr. Mehmet Kasap
Abstract (EN)
In this work the mobility controlled by the dislocation scattering in Ino.51Gao.49As and Ino.6oGao.4oAs has been calculated. The overall mobility in the considered semiconductors has also been calculated using the ISBE including all possible scattering mechanisms. It is found that the calculated resutls are in a good agreement with the experiment. Science codeKeywords Page Supervisor 500.10.02 ISBE, Mobility, Scattering mechanisms
Author
Selçuk Demirezen
How to Cite
Selçuk Demirezen (Master Thesis). Mobility calculations in In0.51Ga0.49As and In0.60Ga0.40As semiconductors, 2001, Gazi University.
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