The investigation of the effect of metal type on the electrical properties of hybrid structure based on functional dye

In this thesis, the effect of phenol red an organic interlayer in a metal semiconductor diode with different metal top contact was studied using various methods. The performance of the diodes was evaluated by examining the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature using thermionic emission, Norde and Cheung-Cheung methods in calculation. The electrical parameters such as barrier height Фb, ideality factor n, and series resistance Rs were determined using the I-V measurements of the diodes. The effect of metal type (M=Ag, Cu, Ni, Pd, Sn) on the electronic parameters has been investigated and compared with each other. The obtained results show that all the devices with and without the organic interlayer have rectification behavior. The barrier height values of the devices increases with inserting the organic layer. The highest value of barrier height was 0.738 eV with the Sn metal and the lowest value was 0.600 eV with Ni metal were obtained by I-V measurements. C-V measurements were used to obtain electrical parameters of fabricated devices. This measurement showed that the organic thin film has been enhanced the electrical properties of the diodes, and these results were agreement with the results obtained from other methods. The obtained results showed that the electrical properties of devices are strongly dependent on the metal type, and presence of interfacial layer. Thus, the modification of these parameters, and increment of the device performance are possible, by using appropriate metal and the organic interfacial layer.