The investigation of structural optical and electrical properties of ZnS semiconductor films obtained by chemical bath deposition method

In this study, ZnS semiconductor films have been obtained in through different deposition times and different deposition temperature on to the glass substrates by the chemical bath deposition method. X-ray diffraction spectra of the films have shown that the films are amorphous and hegzagonal in structure. ZnS films have been determined to have direct band gap characteristics with the band gap values lying in the range between 3.85 eV and 3.97 eV by using optical method. The ohmic conduction mechanisms have been observed in the I-V characteristics of the films. The electrical conductivity values of the films have been found to vary in the range 9.1 10 10 ? s = x (cm)-1 and 9 1.47 10? s = x (cm)-1. The activation energy values have been found between 0.01 eV and 0.81 eV using the temperature-dependent current measurements. Keywords: ZnS, Chemical Bath Deposition Method, X-Ray Diffraction, Optical Properties, Electrical Properties