The temperature dependent electron and magnetotransport in Zn doped InAs grown by LEC

ivTHE TEMPERATURE DEPENDENT ELECTRON ANDMAGNETOTRANSPORT IN Zn DOPED InAs GROWN BY LEC(M.Sc.Thesis)lker KARAGAZI UN VERSITYINSTITUTE OF SCIENCE AND TECHNOLOGYJanuraly 2005ABSTRACTIn this work, the transport properties of Zn doped InAs semiconductor grownby LEC technique were investigated. Resistivity and Hall effect measurementwere taken between 20-345 K and 0-1,5 T. The activation energy of Zn and theband gap of InAs have been calculation from the temperature resistivitymeasurement. The studied sample show n-type electrical conductivity at hightemperatures while it shown p-type conductivity at intermediate temperaturesregion. The magnetoresistivity measurements have been analyzed using theclassical magnetoresistivity theory. The magnetic field dependent resistivity andHall effect measurements have been analyzed using the ?Qantitative MobiltySpectrum Analysis? technique and, the effect of individual carrier electron andmagneto transport properties have also investigated. According tomeasurements a band model inculding an acceptor and donor energy levels wassugguested.Science Code : 202.1.075Key Words : InAs, Hall Mobility, QMSA, electron transport. MagneticresistvityPage number : 81Adviser : Ass. Prof. Mehmet KASAP