The investigation of electrical characteristics of metal-insulator-semiconduktor (Au/SiO2/N-Si) structures by using I-V and C-V mensurements methods
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Abstract (EN)
In this study; the series resistance and the thickness of insulator layer effect on electrical characteristics have been investigedet by using the experimental current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltace (G/ ? -V) meansurement methots. Using these experimental meansurements, the reverse saturation current (I0), ideality factor (n), barrier height (?B(I-V)), the density of interface states (Nss), the donor density (ND), diffusion potentiel (VD), Fermi energy level (EF) and series resistance (Rs) of device were obtained and compared with literatüre.Expersmental results show that both the value of Rs and the thickness of insulator layer strongly affect the electrical characteristics
Author
Fadime Alıtkan
How to Cite
Fadime Alıtkan (Master Thesis). The investigation of electrical characteristics of metal-insulator-semiconduktor (Au/SiO2/N-Si) structures by using I-V and C-V mensurements methods, 2009, Gazi University, Fizik Bölümü.
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