MoO3 thin films growth with physical vapour deposition technique and investigation of electrical and optical properties

In recent years with technological developments, it has become important to investigate alternative materials for increasing energy need and reduce the cost. In addition to the traditional and energy-limited materials, there are increasing options to improve both the structure and efficiency by using different materials. In order to for this purpose, especially in the transition metal oxide family, MoO3 has remarked with its interesting structural, chemical, electrical and optical properties. In this study, MoO3 organic semiconductor thin films were grown on the c-Si, corning glass and ITO coated glass substrates by magnetron sputtering technique which is physical vapour deposition method at room temperature. The structural properties of MoO3 semiconductor thin films were investigated by X-ray diffraction (XRD) and Raman Spectrum analysis. Scanning Electron Microscopy (SEM) was used to determine the surface morphology of the MoO3 semiconductor thin films. Optical properties of MoO3 semiconductor thin films were investigated. For electrical characterization of MoO3 semiconductor thin films, current-voltage measurements were taken in dark and light. In the light of these investigations, parameters such as conductivity types, resistivity, straightening properties and light sensitivities were investigated. Keywords : PVD, MoO3, Magnetron Sputtering Technique, Physical Vapour Deposition