Atomic and electronic properties of adsorption of atom on Si and Ge (111) surfaces
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Abstract (EN)
In this work, atomic and electronic properties of some atoms on Si and Ge (111) surfaces are calculated by using ab initio density functional theory. The relaxed geometries of Tl, Grup-IV and Yb adsorption on the related surfaces are obtained. The atomic parameters, electronic band structures and orbital nature of the surface states were investigated for the stable geometries. The results are compared with the other experimental and theoretical results.
Author
Sibel Özkaya
How to Cite
Sibel Özkaya (Doctorate thesis). Atomic and electronic properties of adsorption of atom on Si and Ge (111) surfaces, 2009, Gazi University.
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