Electrical properties of TiO2 - porous silicon joint

In recent year, porous materials have gained great importance in many applications. This high surface area material, especially for intermediate-surface and materials science is of high significance. This is one of the porous silicon materials. Unlike silicon, porous silicon has attracted attention in the world of science due to appear electroluminescence and photoluminescence at room temperature. The structure of PS is characterized by a great number of micropores (2-50 nm in mean diameter), an extremely large surface aria to volume ratio (up to 103 m2cm-3). Surface bonds, in particular Si-H and Si-O bonds, play an important role in regulating electrical, optical and gas sensing properties of PS. Thin film metal oxide materials have wide applications for gas sensors. Such gas sensors are small in size and cheap. In most cases their electrical conductivity dramatically changes under the influence of different gases. This type of gas sensors work at high temperatures, these detectors is disadvantages. PS-based gas detectors for use as a detector of hydrogen at room temperature due to the operation of structures PS/TiO2work have received the attention of the scientific world. In this study, the electrical parameters of PS/TiO2/Si structures in different environments aimed to determine. PS/Si structures produced by single-crystal silicon anodization using different anodization conditions (current density, acid concentration, etc.). The TiO2 structure coated PS surface and electrical properties of TiO2/PS/Si structures determined in different environments. Keywords: Porous Silicon, Anodization, TiO2, Electrical Properties