The examination of the structural properties of semiconductor cdo material produced by ultrasonic spray pyrolysis method depending on the fluorine doping

In this study, CdO semiconductor films with different fluorine concentrations have been produced at 250°C substrate temperature on to the glass substrates by the spray pyrolysis method. X-ray diffraction spectra of the produced undoped and fluorine doped CdO films have been obtained in the range of 20° ? 2? ? 70° by using CuK? radiation with the waveleght of ?=1,541 Å. Films have shown that the films so formed are polycrystalline and cubic NaCl in structure. The grain sizes of the films have been calculated between 4,685-4,726 Å. The absorption spectra of CdO:F films have been obtained at room temperature covering the spectral range 190 to 900 nm. CdO:F films have been determined to have direct band gap characteristisc with the band gap values lying in the range between 2,38 and 2,83 eV by using optical method.