X-ray radiation effects on the CuInGaTe2 semiconductor diode parameters

In this study, the effect of ionizing X-Ray radiation on the electrical parameters of CuInGaTe2 semiconductor diode was investigated. I-V measurements were taken for five different radiation values (200, 400, 600, 800 and 1000 centiGray (cGy)) in the laboratory environment. The diodes were irradiated with a 6 MV X-Ray generating linear accelerator (LINAC) and standard applicators of 10x10 cm2 area size were used to shape the X-Ray during all irradiation. Electrical parameters such as the ideality factor, barrier height, and series resistance were obtained with the help of the forward bias I-V measurements before and after irradiation. Then these parameters were calculated by Cheung-Cheung method and it was observed that the results were compatible with each other. In addition, the interface states density was determined from the forward bias I-V characteristics. As the irradiation dose increased, the ideality factor increased and the barrier height decreased. This is due to the defects in the interface of the diodes and the increase in the intensity of the interface states. As the radiation dose increased, all series resistance values increased. This was attributed to a decrease in mobility and free carrier concentration. It was observed that the diode diverged from the ideal because of the defects that occurred after X-Ray irradiation. The results show that X-Ray radiation is effective on the electrical properties of diode. This feature demonstrates that the CuInGaTe2 semiconductor diode can be used in X-Ray radiation detection devices.