+10 GS/S zaman aralıklı ADC için 65nm CMOS teknolojisinde 8-BIT 1 GS/S ADC yapısı ve 4-BIT flash ADC
2015
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Advisor: Prof. Dr. Müştak Erhan Yalçın
Abstract (EN)
Data rate of communication systems constantly increasing . Rapid scaling of digital semiconductor technologies has moved the signal processing of these systems to digital domain. Therefore high-speed ADCs are required to form the bridge to take the analog signals in digital domain. Data rates exceeding 10 Gbps makes the use of single channel ADCs unfeasible on this purpose. A power efficient solution is time-interleaving. Time-interleaving relaxes the speed requirements on single channel ADCs and lets designers to focus on power efficiency of the ADC. Channel mismatches in time-interleaved ADCs causes performance degradation. Errors arise mainly due to offset, gain and timing mismatch of channels. Among them, timing error is the most problematic since estimation of timing errors becomes more cumbersome in high-frequencies. Estimation and correction of timing errors in time-interleaved ADCs are hot topics of research. Calibration of errors can be on background or on foreground. Background calibration is more desirable since it allows system to adapt to changing conditions while not hindering the operation of the ADC. Time interleaving errors generate spurs on the spectrum. Spurs are problematic for the wireless communication systems, since they may block the input signal. In order to extinguish the spurs a channel randomization technique is proposed. Technique is based on randomly taking one of the ADC channels to make the errors of the channels noise-like term. It is advantageous since it works on background. Technique maintains a spur-free spectrum however does not improve the SNR of the system. Estimation of channel mismatch errors and clock distribution in a time-interleaved ADC becomes tedious as the number of channels increase. In order to keep the channel number low, channels should be fast while being power efficient. To satisfy this task, an 8-bit 1 GS/s multi-bit per cycle ADC is proposed. ADC employs a novel search algorithm based on redundancy. No calibration scheme required thanks to the algorithm therefore the power efficiency of the system can be increased. In order to realize the multi-bit per cycle structure, a multiple-threshold generation preamp is proposed. Comparators are the most important part of an ADC. Comparator specifications such as speed, accuracy and power consumption directly affect the relative specifications of the whole ADC. A novel latch with embedded preamp is proposed. Novel structure has latch regeneration time, offset, power consumption and kickback noise improvements over the conventional structures. 8-bit 1 GS/s multi-bit per cycle SAR ADC employs a flash ADC to perform the coarse conversion benefit from its speed. Although flash ADCs are fast, offset and kickback noise of comparators can penalize their accuracy. Proposed latch with embedded preamp improves the offset performance. To solve the kickback issue, reference voltages of the flash ADC are sampled. This technique is based on equalizing the kickback for both input and reference voltages therefore eliminating the effect. Sampling network of the ADC is critically important since any error made in the sampling phase directly passes to the ADC. Bootstrapped switches are used to improve the linearity of the switches. By using bootstrap switches, charge injection can be made signal independent. If it is combined with the reference sampling technique used in flash ADC, effects of charge injection can be diminished significantly. ADC blocks are designed and laid out in ST Microlectronics 65 nm process. Postlayout simulations have proven the efectiveness of the proposed techniques and blocks. Tape-out was done in July 2015. Measurements is expected to take place in November 2015.
Author
Dr. Alper Akdikmen
Institution

Istanbul Technical University
Elektronik Mühendisliği Bilim Dalı
How to Cite
Alper Akdikmen (Master Thesis). +10 GS/S zaman aralıklı ADC için 65nm CMOS teknolojisinde 8-BIT 1 GS/S ADC yapısı ve 4-BIT flash ADC, 2015, Istanbul Technical University.
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