4x4 k.p yöntemiyle süperörgü sistemlerinin valans band hesaplamaları

Evaluating the band structure of semiconductors is one of the most important for building quantum lasers, MOS-FETs, bipolar transistors, diodes, semiconductor sensors. This thesis studies generalize k.p method to Compute the band structure of some materials such as zincblende. We calculated the band structure of AlGaAs and GaAs compounds, using both 4×4 Kane's model and Luttinger-Kohn's model approximations. The Kane's model provides incorrect effective mass for heavy hole band, neglected distance between bands and it considered only four bands. However, this model developed basis functions which are useful for Luttinger Kohn model. Luttinger Kohn model correct all Kane's model errors and classified bands as main interest bands named class A and some other bands called class B which influence the main interest bands (class A). In this master thesis the multi-band effective-mass theory also is used. This approximation is helpful for wide-band-gap semiconductors such has GaAs. This wide energy band gap, isotropic simple parabolic is used for conduction band while 4×4 Luttinger-Kohn Hamiltonian is used for valence band. Finally, finite-difference method is used to solve numerically results. Keywords: k.p method, Kane's Model, Luttinger-Kohn Model,