Electrical and structural investigation of Al/Al2O3/CdS MIS structure

In this study, current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Al/Al2O3/CdS MIS Schottky diodes prepared with different oxide thickness have been investigated over voltage range of ±5V. From the evaluation of the experimental measurements, ideality factor (n), barrier height (?B), series resistance (Rs), carrier density (NA) and interfacial state density (Nss) were calculated. When Rs and ?B values decrease with increasing temperature, the n increases with increasing temperature and significant changes were not observed in the examined temperature range for Nss and NA. Examination of humidity sensing property of diode, I-V measurements were done in humidity atmosphere. The resistance of diode decreased with the effect of humidity. Therefore, it was understood that the diode was suitable for the sensor applications.