The fabrication of Au/N-S (MS) structures with a thin organic layer and investigation their electrical parameters as function frequency and voltage

Main electrical parameters of the fabricated Au/PVP/n-S (MPS) structure have been investigated by using the forward and reverse current-voltage (I-V) and impedance-voltage (Z-V) measurements at room temperature. The forward bias semi-logarithmic I-V plot has a good rectifying rate and linear part in the intermediate bias voltage and so both the value of ideality factor (n), zero-bias barrier height (ΦBo)were extracted from the slope and intercept of this linear part as 2.53 and 0.84 eV respectively. The other some main electrical parameters such as values of diffusion potential (VD), density of doping donor atoms (ND), fermi energy level (EF), and barrier height B(C-V) were extracted from the linear parts of reverse bias C-2 vs V plots for 1, 10, 100, and 500 kHz. All these parameters were found strong function of frequency. The value of B(C-V) increases with increasing frequency. The higher value of C and G/ at low frequencies was attributed the existence of surface states (Nss) and their relaxation times. This is because of the Nss and dipoles have enough time to follow external ac signal and can be turned around at low frequencies. Experimental results are indicated that the grown of PVP at Au/n-Si interface by spin coating method can be successfully used instead of traditional an insulator or oxide layer.