Illumination effect on current-voltage (i-v) characteristics of au/pva/n-si schottky barrier diodes (sbds) at various temperatures

In this study, the illumination dependence of forward and reverse bias current-voltage (I-V) characteristics of the PVA (Bi-Doped)/n-Si Schottky barrier diodes (SBDs) have been investigated at 80, 160, 240 and 320 K. The main diode parameters such as reverse-saturation current (Io), zero-bias barrier height ( ? Bo), ideality factor (n), series resistance (Rs) and shunt resistance (Rsh) were obtained from the I-V measurements for each temperature both in dark and under various illumination intensities (50-250 W). All of these parameters were found to be strong function of illumination and temperature. While the change in n and ? Bo with illumination was found to change linearly, the change in Rs and Rsh was found to change exponentally for each temperature. The illumination cofficient of dn/dP and d ? Bo/dP was found to be positive and negative for each temperature, respectively. The reverse bias I-V characteristics show considerably a non-saturating behaviour at low temperatures but it througly began disappear at 320 K. The fill factor (FF) was found to be 0.40 at 320 K under 50 W. The forward bias I-V characteristics of the diodes have been also explained by the SCLC model. The obtained experimental results show that the fabricated diode can be used a photodiode in optoelectronic applications.