The investigation of the electrical parameters under the different illuminations intensity of Au/BOD-Z-EN/n-Si/In Schottky diode

In this study, BOD-Z-EN organic compound thin films on n type Si wafer have been deposited by spin coating method. As a result, Au/BOD-Z-EN/n-Si/In Schottky diode was fabricated and main electrical characteristics of the diode were investigated using I-V measurements in dark and under various illumination intensity at room temperature. The ideality factor (n) values have been found to be 2,33, 1,55 for dark and 100 mW/cm2, respectively. The barrier height (ɸ𝑏) values have been found to be 0,86 eV, 0,90 eV for dark and 100 mW/cm2, respectively. With increasing lighting intensity, it was seen that the value of ideality factor decreased and the barrier height value increased. In addition to, the series resistance (Rs) values from Cheung&Cheung method have been determined. The series resistance values have been found to be 5850 Ω and 2375 Ω at dark and 100 mW/cm2, respectively. The open circuit voltage (Voc) and the short circuit current (Isc) values of the Au/BOD-Z-EN/n-Si/In diode were 0,15 V and 10,71 mA for 100 mW/cm2 illumination intensity, respectively. After investigating the results, it was observed that the Au/BOD-Z-EN/n-Si/In Schottky diode was sensitive to light and showed photovoltaic properties.