The investigation of the electrical parameters of au/bodipy-ph-oh/n-si/in schottky diodes depending on illumination intensity

In this study, BODIPY-Ph-OH organic compound was grown as thin film on the n-type silicon substrate by using the spin coating method. Au/BODIPY-Ph-OH/n-Si/In Schottky diode was produced and diode parameters of this diode were examinade by taking I-V measurement at room temperature under dark and differet illumination intensities. Based on these investigations, the barrier height and ideality factor values of the diode were found to be 0,828 eV and 2,32 for darkness, respectively, 0,873 eV and 1,56 for 100 mW/cm2, respectively. It is seen that ideality factor decreases while the barrier height value increases with the increase in illumination intensity. The series resistance values of the produced diode were found to be 2660 Ω and 1200 Ω for darkness and 100 mW/cm2, respectively. Open circuit voltage and short circuit values of Au/BODIPY-Ph-OH/n-Si/In diode were fond to be 0,18 V and 0,033 mA for 100 mW/cm2, respectively. When the results examined, Au/BODIPY-Ph-OH/n-Si/In Schottky diode was found to be sensitive to light and showed photovoltaic behavior.