The fabrication of Au(MgO-PVP)/n-Si (MPS) Schottky barrier diodes and the investigation their electrical and dielectrical properties

In this thesis Au/(MgO-PVP)/n-Si Schottky Dilodes (SDs) , 〈100〉 orientation and 350 μm thickness are grown on to a wafer for analyzing electrical paremeters and conduction mechanism. Dielectric and electrical parameters were investigated between -2-3 V voltage and 10kHz-5MHz frequency by impedance analyzer. Then electrical paramteres such as ideality factor, barrier hight, series resistance were extracted from three different methods (TE, Cheung and Norde functions) using I-V measurements and the results were compared. Nss and energy dependent distribution of MgO-PVP organic interlayer was calculated by I-V datas. When Ln(I)-Ln(V) curves were investigated, it was seen that conduction mechanism were ohmic and limit space charge at low, medium and high voltages. Both capacitance and conduction values have wide distrubition in inversion, depletion and acumulation region due to organic (MgO-PVP) Nss, series resistance. Between these two Nss and polarization are effective in inversion and depletion regions at low intermediate frequencies, but Rs are effective in accumulation region at high frequencies. The voltage and frequencies dependent Nss and Rs were extracted from respectively Hill Coleman ve Nicollian Brews methods. Some basic electrical parameters such as diffusion potential, Fermi Energy, depletion region width and barrier high were extracted from the intercept and slope of the C-2-V curves as function of frequency. In addition, complex dielectric constant, reel and imaginary parts of complex modulus, ac conductivity were extracted from C and G/w datas as function of frequency and voltages. MgO-PVP interlayer dielectric constant was calculated as 5.0 at 10 kHz such that this calculation is higher than traditional insulator layer. (MgO-PVP) has more advantages such as easy grown processes, low cost, flexibility, high mechanical power than traditional insulators like SiO2. These results show that (MgO-PVP) polymer interlayer has more storage and bigger polarization than MPS and MOS type capacitors.