Investigation of temperature dependent basic electrical parameters of Au/PVA/n-Si (MIS) Schottky diodes

In this study, the capacitance - voltage (C-V) and conductance - voltage (G/w-V) characteristics of Au/PVA/n-Si (metal-insulator-semiconductor) Schottky diodes have been investigated over a wide temperature and the voltage range of 80- 400K and ±6 V, respectively, at 1 MHz. It is found that in the presence of series resistance, the forward bias C-V plots exhibit a peak. The crossing of the G/w?V curves appears as an abnormality compared to the conventional behavior of ideal MIS diode. From the evaluation of the experimental measurements, Schottky barrier height (?b), depletion layer thickness (Wd), surface states (Nss), series resistance (Rs) and other main electrical parameters were calculated. Nss and Rs values are important parameters that strongly influence the electrical parameters in MIS Schottky diode. When the Rs decreases with increasing temperature, the Nss increases with increasing temperature. In addition, Cm ve Gm/w values measured at 1MHz high frequency were corrected for the effect of series resistance to obtain the real Cc and Gc/w.