Temperature and frequency depent investigation of diode parameters of Au/TiO2/n-Si/Au Schottky barrier

In this study, Au/TiO2/n-Si/Au structure was prepared on n-type Si semiconductor with orientation (100), having 380 ?m thickness and carriers concentration of 1x1018 cm-3 by metal evaporation method in the high vacuum. TiO2 thin film was deposited by UHV magnetron sputtering system using high purity (99,999%) Ti target, in Ar+O2 gas mixtures on n type Si substrate. Some basic electrical parameters of this sample were investigated in the temperature range of 120-400 K. Prepared structure's current-voltage (I-V) specifications has been calculated in 120-400 K temperature ranges and ideality factor (n), Schottky barrier heights (?B) and other related diode parameters has been evaluated. At room temperature barrier height and ideality factor has been determined as 0.761 eV and 3.2 respectively. It has been observed that ideality factor decreases, barrier height increases as temperature increases. In addition, the same diode parameters have been calculated at room temperature under light conditions. Current-voltage (I-V) has been measured with different output powers of 10-250 watt using the Light Source.Some electrical parameters of this sample, for example diffusion voltage (Vd), barrier height (?B), donor concentration (ND), depletion layer width (WD) and insulation layer thickness (?) were evaluated in the range of 120 K-400 K at 1 MHz frequency and different frequencies at room temperature by capacitance-voltage (C-V) characteristics. At room temperature, barrier height and donor concentration have been calculated as 0,761 eV, 1,92x1016 cm-3 respectively from C-V measurements.Key Words : Schottky barrier, Metal Semiconductor Contacts, Diode Parameters, TiO2