Development of Cu2SnS3 thin film solar cells

In this work, it was aimed to develop In2S3 buffer and Cu2SnS3 absorber thin films for CTS-based thin film solar cells and to illuminate their physical mechanisms. In addition, it was also targeted to perform the fabrication of CTS solar cell with the architecture of Ni/Al/Ni//Al:ZnO/i-ZnO/ In2S3/Cu2SnS3/Mo/SLG using the developed buffer and absorber films and to determine the output parameters. CTS absorber films were developed by sulfurization processes of the precursor stacks in a two-zoned CVD system after the deposition of Cu and Sn precursor metallic stacks in different configurations. The Mo back contact, In2S3 buffer layer, i-ZnO/AZO window layer and front contacts of the cells were improved via the magnetron sputtering technique. Advanced characterizations of the deposited films were determined with the purpose of examining the structural, morphological, optical and electrical properties of each thin film layer developed for the solar cell. CTS solar cells were achieved with device fabrication steps including metallization and mechanical scribing steps. The efficiency values of the developed solar cells were obtained under solar radiation power of 100 mW/cm2 (AM1.5) to be 1.30%, 2.91%, 2.99%, 3.02% and 3.11%.