Production and elektrical characterization of CuO and NiO interlayer photodiode

In this study, Al/p-Si/CuO:Ni/Al and Al/p-Si/NiO:Cu/Al diode structures, photodiode properties, frequency and temperature-dependent characteristics were investigated. Interfacial layer Ni-doped CuO and Cu-doped NiO films were obtained using both spin-coating and spray pyrolysis methods. The structural properties and surface morphologies of the produced interfacial layers with XRD and SEM devices were examined and analyzed. I-V characteristic measurements under different light intensities in the dark and in the range of 30-40-60-100 mV/cm2 were taken and their graphics were drawn. The barrier height, ideality factor, short circuit current (Isc), open circuit voltage (VOC), solar cell efficiency (𝞰p), fill factor (FF) and maximum power current (Imax) and voltage (Vmax) values were calculated. When the measurements taken under light intensities were examined, it was seen that the diodes produced showed photodiode properties. Using Norde equations, barrier heights and series resistance (Rs) values were calculated and interpreted by drawing F(V)-V graphs. I-V graphics at different temperatures in the range of 60K-320K were drawn and discussed. temperature dependent barrier height and ideality factor values were analyzed. The 320K barrier height values and ideal factor values of diodes Al/p-Si/CuO:Ni/Al and Al/p-Si/NiO:Cu/Al were calculated as 0,76V, 2,07 and 0,76V, 1,82 respectively. Frequency dependent G-V, C-V, 1/C2-V, Ri-V graphics were drawn and their graphics were discussed. In addition, parameters such as Nss, Wd, EF, Φb and Rs at different frequency values were calculated and their changes against different frequency values were interpreted. According to the result, it was seen that the devices can be used in both photodiode and switching devices.