Determination of the structural, optical and electrical characteristics of InSe/rubrene, CIS/rubrene, CIGS/rubrene, InSe/coronene, CIS/coronene, CIGS/coronene heterojoints growth on ITO glass

In this study, we coated InSe CIS and CIGS thin films on the glass/ITO substrate by electrochemical coating method. We divided the thin films obtained into two groups and annealed one groups. We separately examined the stuctural, surface and optical properties of both non-annealed and annealed thin films. Later we separately coated rubrene and coronene organic semiconductor compounds on the annealed and non-annealed glass/ITO/InSe, glass/ITO/CIS and glass/ITO/CIGS thin films by PVD method. We investigated the structural, surface and optical properties of the heterojoints obtained and the electrical properties in dark and light environments by taking In (indiyum) contacts to these heterojoints. From the XRD analysis, it was seen that InSe thin film contains InSe and In2O3 phases, annealed InSe thin film contains InSe, In6Se7 ve In2(SeO4)3 phases, CIS thin film contains CuInSe2, (Cu2Se)x(In2Se3)1-x, In2Se3, CuSe and InSe, annealed CIS thin film contains Cu0,28In1,72Se2,72, In2O3, (Cu2Se3)x(In2Se3)1-x, CuO and CuSe phases, CIGS thin film contains CuGa2O14Se4, CuGa0,6In2,4Se5, In2O3, CuIn3Se5, In4Se3, CuGa2O4 and CuO phases, annealed CIGS thin film CuGa0,6In0,4Se2, CuGa0,6In2,4Se5, InSe, In6Se7. Surface morphology of films were examined with AFM, SEM and EDS. From the UV-Vis analysis, the band gap values and transmitance values at 400 nm-700 nm of thin films were determined. In I-V characterization performed in dark and light environments, it was observed that all of the heterojoints were light sensitive and some films showed rectifier characteristics.