Dijital 0.18 µm CMOS teknolojili bir tam entegre K-band güç yükselteci tasarımı

Applications at K-Band frequencies (the part of the electromagnetic spectrumde ? ned by IEEE to be from 18 GHz to 27 GHz) like K-Band satellite communication,vehicular short range radars, point-to-point (PTP) radio bring the need for lowcost, environment friendly RF blocks. Among them, the design of power ampli ? ers(PAs) is one of the most challenging. In this thesis, a three-stage PA is developedin 0.18 µm digital CMOS technology. The design and simulations are based on themodels obtained from the foundry. The ? nal design has been fabricated at thefoundry and measurements show +16.9 dBm of linear output power and apower added e ? ciency (PAE) of 12.3% at 20 GHz at the P1dB point.