Investigation of the electronic transport mechanisms by using pulsed measurement techniques

The pulsed current-voltage (I-V) measurements were performed in AlGaN/AlN/GaN, AlInN/AlN/GaN, GaInNAs/GaAs, GaN/AlN/InN, and InGaN/GaN samples. The AlGaN/AlN/GaN and AlInN/AlN/GaN heterostructure samples were grown by Metalorganic Chemical Vapor Deposition (MOCVD) technique, GaInNAs/GaAs, GaN/AlN/InN, and InGaN/GaN samples were grown by Molecular Beam Epitaxy (MBE) technique.The pulsed current-voltage measurements were carried out in the temperature range between 1.7 and 300 K, in steps of 50 K. The pulsed voltages up to 200 V with pulse width up to 200 ns were applied to samples in the measurements. The drift velocity, electron mobility and electric field dependent power loss per electron were determined from the analysis of the results. The temperature dependent power loss per electron were also determined using the mobility comparison method. The results of the temperature dependent power loss per electron were compared with current theoretical models in the literature. It was indicated that, the electron energy relaxation time were limited by optical phonons at high temperatures.Key Words: Heterojunction, quantum well, high electric field transport mechanism, hot electrons, power loss