Exploring the potential of graphene and MoS2/graphene channels with MXene contacts in fet structures

Compounds containing transition metal carbides, nitrides, and carbonitrides, named as MXenes were introduced to the world of 2D materials with the discovery of Ti3C2 in 2011. The use of MXenes for device applications in combination with other 2D materials is still at an early stage of investigation. In this study, Molybdenum carbide (Mo2C) layers which are grown using Chemical Vapor Deposition (CVD) technique was reported. Similarly, concentrated on structures formed with in-house grown monolayer 2D CVD Molybdenum disulfide (MoS2). Mo2C flakes of 200 nm average thickness and width from 5 to 70 μm were grown. The 2D structures were investigated by μ-Raman spectroscopy. The thicknesses and surface topographies of the 2D materials were examined by atomic force microscopy (AFM). The contact resistance, threshold voltage, ON/OFF ratio, and electron mobility of the field effect transistor (FET) structure that has MXene contact and MoS2, Graphene/MoS2 channels, formed after transfer onto SiO2/Si substrate, were examined. These electrical measurements were made by using a probe station. Contrary to the general approach, MXene was produced in a controlled manner using a bottom-up production technique. The produced MXene and MoS2 structures were successfully transferred onto SiO2/Si substrate, by overlapping each other. The contact resistance of the obtained heterostructures was measured. Determining the electrical properties of the new FET structure with such studies is important for observing the compatibility in terms of electrical features of the materials and providing ideas for future studies.