The effect of beta and gamma rays on the charecteri̇stics of graphene field effect transistors

Graphene is a two-dimensional material and an effect will be made on graphene will effect source-drain current flow because of absence of a volumetric structure and it may allow us fabrication of a sensitive radiation detector. In this thesis it is aimed the investigation of elecftrical characteristic changing of graphene which is located on Si/SiO2 under radiation ambient. 60Co source for Gamma rays with 1.33 MeV, 90Sr source for Beta rays with 0.546 MeV and 131I source for Beta rays with 0.971 MeV are used as radiation sources. Experimental results show that Graphene Field Effect Device which are fabricated on SiO2/n++-Si can give response to beta rather than gamma rays. In some experiments, source-drain current response can reach over 95%. Keywords: Graphene, Radiation, 60Co, 90Sr, 131I, Beta